fast recovery rectifier voltage range 50 to 1000 volts current 1.0 ampere rectron semiconductor technical specification features * fast switching * low leakage * low forward voltage drop * high current capability * high currenf surge * high reliability mechanical data * case: molded plastic * epoxy: device has ul flammability classification 94v-o * lead: mil-std-202e method 208c guaranteed * mounting position: any * weight: 0.19 gram maximum ratings and electrical characteristics ratings at 25 o c ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20%. electrical characteristics (at t a = 25 o c unless otherwise noted) 1f1 thru 1f7 r-1 maximum ra tings (at t a = 25 o c unless otherwise noted) notes : 1. reverse recovery test conditions: i f = 0.5a, i r = -1.0a, i rr = -0.25a 2. measured at 1 mh z and applied reverse voltage of 4.0 volts dimensions in inches and (millimeters) 2002-11 ratings maximum recurrent peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward rectified current at t a = 25 o c peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (jedec method) typical junction capacitance (note 2) operating and storage temperature range symbol v rrm v dc i o i fsm c j t j , t stg v rms 1f1 1f2 1f3 1f4 1f5 1f6 1f7 units 50 100 400 800 1000 volts volts volts amps 35 50 420 600 70 100 280 400 600 560 800 700 1000 1.0 25 15 -55 to + 150 amps pf 0 c 200 140 200 at rated dc blocking voltage t a = 25 o c characteristics maximum full load reverse current full cycle average, .375 (9.5mm) lead length at t l = 55 o c maximum reverse recovery time (note 1) v f symbol i r trr 1f1 1f2 1f3 1f4 1f5 1f6 1f7 units 1.3 5.0 100 150 250 500 uamps uamps nsec maximum dc reverse current maximum instantaneous forward voltage at 1.0a dc volts .787 ( 20.0 ) min. .106 ( 2.7 ) .126 ( 3.2 ) .787 ( 20.0 ) min. .102 ( 2.6 ) .091 ( 2.3 ) dia. .025 ( 0.65 ) .021 ( 0.55 ) dia.
rectron rating and characteristic curves ( 1f1 thru 1f7 ) junction capacitance, (pf) fig. 5 - typical junction capacitance reverse voltage, ( v ) 200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 t j = 25 trr +0.5a 0 -0.25a -1.0a 1cm set time base for 50/100 ns/cm fig. 6 - test circuit diagram and reverse 50 noninductive 10 noninductive d.u.t 25 vdc (approx) ( - ) ( - ) ( + ) ( + ) 1 non- inductive oscilloscope (note 1) pulse generator (note 2) notes: 1 rise time = 7ns max. input impedance = 1 megohm. 22pf. 2. rise time = 10ns max. souce impedance = 50 ohms. recovery time characteristic fig. 1 - typical forward current average forward current, (a) ambient temperature, ( ) derating curve 1.0 .8 .6 .4 .2 0 0 25 50 75 100 125 150 175 single phase half wave 60hz resistive or inductive load fig. 3 - typical instantaneous forward characteristics instantaneous forward current, (a) instantaneous forward voltage, (v) t j = 25 pulse width=300us 1% duty cycle 20 10 3.0 1.0 0.3 0.1 .03 .01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 fig. 4 - typical reverse characteristics instantaneous reverse current, (ua) percent of rated peak reverse voltage, (%) t j = 50 t j = 25 10 .01 .02 .04 .06 .1 .2 .4 .6 1.0 2 4 6 0 20 40 60 80 100 120 140 fig. 2 - maximum non-repetitive forward peak forward surge 8.3ms single half sine-wave (jeded method) number of cycles at 60hz surge current current, (a) 200 100 50 30 20 10 1 5 10 50 100
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